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2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3834 200 120 8 7(Pulse14) 3 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Humidifier, DC-DC Converter, and General Purpose
(Ta=25C) 2SC3834 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF
2.5 BCE 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
V
16.00.7 8.80.2
a b
o3.750.2
V
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 0.5max tstg (s) 3.0max tf (s) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 7
200 mA
VCE( sat ) - I B Characteristics (Typical)
2.6
IC - V BE Temperature Characteristics (Typical)
7 (V C E= 4V)
150
mA mA
6
100
6 Collector Current I C( A) 2
Collector Current I C( A)
5
60mA
40m A
5
4
4
p) Tem
mp) (Cas e Te
(Ca
1
se
3
20 mA
3
C
1
1 0 0.005 0.01
0
0
1
2
3
4
0.05
0.1
0.5
1
0
0
-30C
I B =10mA
25C
125
2
2
(Case
Temp
5A
)
3A
IC = 1 A
0.5 Base-Emittor Voltage V B E( V)
1.0 1.1
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(VCE=4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 300
1 2 5 C
(V C E= 4V)
j- a( C/W)
Transient Thermal Resistance
hFE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
4
Typ
100
100
25
C
-30
50
C
1
50
0.5
20 0.02
0.1
0.5
1
5
7
20 0.01
0.05
0.1
0.5
1
57
0.3
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 30 20 10 Cut- off F req uency f T( M H Z) 5 Collector Curr ent I C( A) 20
Safe Operating Area (Single Pulse)
10
P c - T a Derating
50
0m
s
Ma xim um Powe r Dissipat io n P C( W)
40
W ith
10 ms
In fin
30
ite he
1 0.5 Without Heatsink Natural Cooling
at si nk
20
10
10 Without Heatsink 0 25 50 75 100 125 150
0.1 0 -0.01 0.05 -0.05 -0.1 -0.5 -1 -5 5 10 50 120 200 Emitter Current I E( A) Collector-Emitter Voltage V C E( V)
2 0
Ambient Temperature Ta(C)
74

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